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18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG GD-32
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 4000pcs./reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
(Ta=25C )
Ratings -4 -4 IDSS 50 125 -55 to +125
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Synbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure
(Ta=25C )
Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V,ID=10mA f=12GHz -3 -15 -0.1 12.0 --
Limits TYP. ----13.5 0.35 MAX -50 60 -1.5 -0.5
Unit V A mA V dB dB
MITSUBISHI
(1/6)
18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
Fig.1
3.20.1
Top
(0.30)
2.60.1 0.50.1
(0.30)
Bottom
(2.3)
(0.30) 0.650.1
Ac AA
2.20.1 1.70.1
2.60.1
3.20.1
(0.30)
Unit : mm
0.150.05
1.350.2
Side
Gate Source Drain
(GD-32)
MITSUBISHI
(2/6)
(2.3)
18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
TYPICAL CHARACTERISTICS
(Ta=25C)
ID vs. VDS
50 VGS=-0.1V/STEP
ID vs. VGS
50 VDS=2V
ID(mA)
40
DRAIN CURRENT, I D (mA)
0 1 2 3
40 30
DRAIN CURRENT
30
20
20 10
10
0
0 -1.0 -0.5 0.0
Drain to Source voltage VDS(V)
Gate to Source voltage, VGS(V)
NF & Gs vs. ID
1.2 16
VDS=2V f=12GHz
NOISE FIGURE, NF (dB)
Gs 0.8 12
0.6 NF
10
0.4
8
0.2 0 5 10 15 20
6
DRAIN CURRENT, ID (mA)
MITSUBISHI
(3/6)
ASSOCIATED GAIN, Gs (dB)
1.0
14
18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
S11 (mag) (ang) 0.989 -13.9 0.967 -28.2 0.929 -41.5 0.882 -54.4 0.822 -65.9 0.757 -79.5 0.686 -93.3 0.611 -108.8 0.533 -125.1 0.463 -143.6 0.411 -164.1 0.382 174.7 0.378 152.3 0.395 131.4 0.435 113.6 0.486 99.0 0.543 86.2 0.603 73.7 0.663 61.2 0.704 50.1 0.746 40.5 0.778 32.3
S21 (mag) (ang) 5.497 164.6 5.416 149.6 5.278 135.0 5.172 121.5 4.932 108.0 4.959 94.1 4.826 80.4 4.732 66.8 4.587 53.6 4.403 40.5 4.140 27.8 4.010 15.6 3.782 3.3 3.653 -9.1 3.514 -21.3 3.366 -32.9 3.172 -45.3 3.049 -57.7 2.877 -70.2 2.641 -81.3 2.470 -91.5 2.311 -102.3
S12 (mag) (ang) 0.017 78.9 0.028 70.9 0.040 61.7 0.051 53.3 0.061 45.9 0.071 37.6 0.080 29.9 0.086 22.7 0.092 16.2 0.096 10.2 0.100 4.8 0.105 0.1 0.111 -4.7 0.115 -9.7 0.121 -14.6 0.126 -19.8 0.133 -25.5 0.140 -31.2 0.147 -37.9 0.152 -45.0 0.156 -52.4 0.156 -58.0
S22 (mag) 0.637 0.626 0.610 0.586 0.572 0.538 0.502 0.456 0.408 0.359 0.311 0.267 0.221 0.182 0.152 0.134 0.139 0.183 0.251 0.309 0.363 0.411
(ang) -10.6 -21.1 -31.1 -40.5 -50.8 -60.3 -69.8 -78.6 -86.5 -93.8 -100.7 -108.9 -119.3 -135.4 -157.0 177.7 145.4 115.8 95.1 80.2 70.0 59.8
NOISE PARAMETERS
Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 opt (mag) 0.671 0.598 0.537 0.474 0.399 0.329 0.299 0.349 0.392 0.432 0.467
(VDS=2V,ID=10mA, Ta=25C)
Board: r=2.2 Thickness: 0.25mm (4-0.3: through-hole)
NFmin (ang) (dB) 13.9 0.370 0.20 37.2 0.262 0.22 60.8 0.197 0.25 86.2 0.155 0.29 119.2 0.102 0.32 147.6 0.062 0.35 173.6 0.069 0.40 -143.9 0.083 0.49 -106.5 0.109 0.59 -73.0 0.146 0.73 -42.7 0.180 0.96 Note: rn is normarised by 50 ohm.
rn
Reference point
Reference point
0.74
(Unit: mm)
2.60
(1.0mm)
MITSUBISHI
(4/6)
1.30
2.08
18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 0.996 -12.6 0.998 -25.4 0.988 -38.1 0.984 -50.8 0.971 -62.6 0.963 -77.1 0.949 -92.8 0.936 -110.9 0.915 -131.2 0.892 -153.9 0.878 -178.2 0.870 157.5 0.868 133.9 0.875 113.0 0.883 94.9 0.895 79.7 0.901 66.6 0.912 54.7 0.923 43.8 0.934 34.0 0.947 25.0 0.945 17.6 S21 (mag) (ang) 0.008 90.7 0.019 92.4 0.032 90.0 0.048 86.4 0.068 80.5 0.092 72.6 0.119 62.9 0.149 51.8 0.181 39.2 0.211 25.5 0.235 10.8 0.252 -3.9 0.258 -18.6 0.257 -32.0 0.250 -44.4 0.238 -55.0 0.225 -64.2 0.213 -72.0 0.205 -78.8 0.201 -85.1 0.195 -92.1 0.188 -98.3 S12 (mag) (ang) 0.008 93.1 0.019 92.2 0.032 90.6 0.048 86.3 0.069 81.0 0.092 72.7 0.120 62.9 0.150 52.2 0.182 39.5 0.211 25.9 0.237 11.1 0.252 -3.9 0.259 -18.6 0.257 -32.0 0.249 -44.1 0.238 -54.9 0.225 -64.0 0.215 -71.8 0.205 -78.7 0.202 -85.5 0.193 -92.7 0.188 -98.5 S22 (mag) 0.700 0.696 0.703 0.708 0.710 0.718 0.730 0.739 0.750 0.760 0.769 0.785 0.795 0.805 0.815 0.824 0.833 0.845 0.856 0.861 0.859 0.854 (ang) 167.0 154.5 142.2 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4 -13.1 -18.2
(VDS=0V,VGS=-2.5V,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 1.003 -8.2 0.998 -16.7 0.994 -24.6 0.991 -32.2 0.986 -38.9 0.983 -46.7 0.977 -54.4 0.972 -63.3 0.963 -72.7 0.950 -83.2 0.938 -94.7 0.929 -107.7 0.916 -121.9 0.911 -137.5 0.904 -155.7 0.903 -175.3 0.910 163.6 0.914 142.1 0.912 121.4 0.927 103.4 0.955 87.0 0.971 72.1 S21 (mag) (ang) 0.022 80.5 0.045 72.1 0.067 62.9 0.088 54.8 0.109 46.3 0.133 37.4 0.157 28.6 0.183 18.8 0.211 8.3 0.237 -2.6 0.263 -14.9 0.289 -27.8 0.310 -42.3 0.326 -58.6 0.324 -76.7 0.305 -95.2 0.269 -114.1 0.219 -131.5 0.172 -145.0 0.136 -160.1 0.089 -178.2 0.048 167.9 S12 (mag) (ang) 0.023 79.5 0.045 71.9 0.067 63.2 0.089 54.7 0.110 46.5 0.132 37.5 0.158 28.7 0.184 18.6 0.210 8.5 0.238 -2.7 0.264 -14.8 0.289 -27.8 0.312 -42.2 0.327 -58.7 0.325 -76.6 0.306 -95.4 0.271 -114.4 0.220 -131.6 0.172 -144.9 0.136 -160.2 0.090 -176.6 0.049 171.4 S22 (mag) 0.998 0.990 0.995 0.993 0.993 0.985 0.982 0.970 0.962 0.956 0.945 0.932 0.921 0.914 0.909 0.911 0.916 0.924 0.926 0.939 0.961 0.968 (ang) -9.2 -18.6 -27.7 -36.7 -46.8 -56.3 -65.6 -75.4 -85.2 -95.5 -106.4 -118.6 -132.8 -149.6 -167.8 173.5 153.5 133.0 114.9 99.3 84.2 69.8
MITSUBISHI
(5/6)
18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
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MITSUBISHI
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